BCPA94 -0.5 a, -400 v pnp silicon epitaxial planar transistor elektronische bauelemente 11-jun-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a94 ???? ? c e b rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the BCPA94 is designed for application requires high voltage. features ? high voltage v ceo =400v (min) at i c =1ma ? high current gain i c =300ma at 25 c ? complementary with bcpa44 marking absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -6 v collector current (dc) i c -0.5 a total power dissipation p d 1 w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -400 - - v i c = -100 ? a, i e =0 collector-emitter breakdown voltage v (br)ceo -400 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -6 - - v i e = -100 ? a, i c =0 collector cut-off current i cbo - - -100 na v cb = -400v, i e =0 collector-emitter current i ces - - -500 na v ce = -400v, v be =0 emitter cut-off current i ebo - - -100 na v eb = -6v, i c =0 dc current gain * h fe1 40 - - v ce = -10v, i c = -1ma h fe2 50 - 300 v ce = -10v, i c = -10ma h fe3 45 - - v ce = -10v, i c = -50ma h fe4 20 - - v ce = -10v, i c = -100ma collector-emitter saturation voltage * v ce(sat)1 - - -350 mv i c = -1ma, i b = -0.1ma v ce(sat)2 - - -500 i c = -10ma, i b = -1ma v ce(sat)3 - - -750 i c = -50ma, i b = -5ma base-emitter saturation voltage * v be(sat) - - -750 mv i c = -10ma, i b = -1ma * pulse test: pulse width Q 380 s, duty cycle Q 2% date code sot-89
BCPA94 -0.5 a, -400 v pnp silicon epitaxial planar transistor elektronische bauelemente 11-jun-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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